NXP Semiconductors
BLF573; BLF573S
HF / VHF power LDMOS transistor
7.2 Reliability
105
Years
104
(1) (2) (3) (4) (5) (6)
001aaj142
103
102
10
(7) (8) (9) (10) (11)
1
0
4
8
12
16
20
Idc (A)
TTF (0.1 % failure fraction).
(1) Tj = 100 °C
(2) Tj = 110 °C
(3) Tj = 120 °C
(4) Tj = 130 °C
(5) Tj = 140 °C
(6) Tj = 150 °C
(7) Tj = 160 °C
(8) Tj = 170 °C
(9) Tj = 180 °C
(10) Tj = 190 °C
(11) Tj = 200 °C
Fig 3. BLF573 and BLF573S electromigration (ID, total device)
BLF573_BLF573S
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 July 2010
© NXP B.V. 2010. All rights reserved.
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