BLF573 Просмотр технического описания (PDF) - NXP Semiconductors.
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BLF573 Datasheet PDF : 16 Pages
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NXP Semiconductors
BLF573; BLF573S
HF / VHF power LDMOS transistor
800
Coss
(pF)
600
001aaj141
400
200
0
0
10
20
30
40
50
VDS (V)
Fig 1.
VGS = 0 V; f = 1 MHz.
Output capacitance as a function of drain-source voltage; capacitance value
without internal matching
6.1 Ruggedness in class-AB operation
The BLF573 and BLF573S are capable of withstanding a load mismatch corresponding to
VSWR = 13 : 1 through all phases under the following conditions: VDS = 50 V;
IDq = 900 mA; PL = 300 W; f = 225 MHz.
7. Application information
7.1 Impedance information
Table 8. Typical impedance
Measured ZS and ZL test circuit impedances.
f
ZS
MHz
Ω
225
0.7 + j2.0
ZL
Ω
1.95 + j2.0
gate
ZS
drain
ZL
001aaf059
Fig 2. Definition of transistor impedance
BLF573_BLF573S
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 July 2010
© NXP B.V. 2010. All rights reserved.
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