BLF573 Просмотр технического описания (PDF) - NXP Semiconductors.
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BLF573 Datasheet PDF : 16 Pages
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NXP Semiconductors
BLF573; BLF573S
HF / VHF power LDMOS transistor
2. Pinning information
Table 2. Pinning
Pin
Description
BLF573 (SOT502A)
1
drain
2
gate
3
source
BLF573S (SOT502B)
1
drain
2
gate
3
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
1
3
[1]
2
2
3
sym112
1
1
3
[1]
2
2
3
sym112
Table 3. Ordering information
Type number Package
Name Description
Version
BLF573
-
flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
BLF573S
-
earless flanged LDMOST ceramic package, 2 leads
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Tstg
storage temperature
Tj
junction temperature
5. Thermal characteristics
Min Max Unit
-
110 V
−0.5 +11 V
-
42
A
−65 +150 °C
-
225 °C
BLF573_BLF573S
Product data sheet
Table 5. Thermal characteristics
Symbol Parameter
Conditions
Typ
Rth(j-c)
thermal resistance from Tcase = 80 °C; PL = 300 W [1] 0.21
junction to case
Unit
K/W
[1] Rth(j-c) is measured under RF conditions.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 8 July 2010
© NXP B.V. 2010. All rights reserved.
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