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BLF573

HF / VHF power LDMOS transistor

NXP Semiconductors. 

BLF573; BLF573S

HF / VHF power LDMOS transistor

Rev. 3 — 8 July 2010

Product data sheet

1. Product profile

1.1 General description

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific

and medical applications in the HF to 500 MHz band.

Table 1. Production test information

Mode of operation f

VDS

PL

Gp

ηD

(MHz)

(V)

(W)

(dB)

(%)

CW

225

50

300

27.2

70

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

„ Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an

IDq of 900 mA:

‹ Average output power = 300 W

‹ Power gain = 27.2 dB

‹ Efficiency = 70 %

„ Easy power control

„ Integrated ESD protection

„ Excellent ruggedness

„ High efficiency

„ Excellent thermal stability

„ Designed for broadband operation (HF and VHF band)

„ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications

„ Industrial, scientific and medical applications

„ Broadcast transmitter applications

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