BLF6G10LS-135R Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

BLF6G10LS-135R

Power LDMOS transistor

NXP Semiconductors. 

NXP Semiconductors

BLF6G10LS-135R

Power LDMOS transistor

10. Abbreviations

Table 9. Abbreviations

Acronym

Description

3GPP

Third Generation Partnership Project

CCDF

Complementary Cumulative Distribution Function

CDMA

Code Division Multiple Access

CW

Continuous Wave

DPCH

Dedicated Physical CHannel

EDGE

Enhanced Data rates for GSM Evolution

GSM

Global System for Mobile communications

LDMOS

Laterally Diffused Metal-Oxide Semiconductor

LDMOST

Laterally Diffused Metal-Oxide Semiconductor Transistor

PAR

Peak-to-Average power Ratio

PDPCH

transmission Power of the Dedicated Physical CHannel

RF

Radio Frequency

VSWR

Voltage Standing-Wave Ratio

W-CDMA

Wideband Code Division Multiple Access

11. Revision history

Table 10. Revision history

Document ID

BLF6G10LS-135R_1

Release date

20081117

Data sheet status

Product data sheet

Change notice

-

Supersedes

-

BLF6G10LS-135R_1

Product data sheet

Rev. 01 — 17 November 2008

© NXP B.V. 2008. All rights reserved.

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