BLF6G10LS-135R Просмотр технического описания (PDF) - NXP Semiconductors.
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BLF6G10LS-135R Datasheet PDF : 10 Pages
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NXP Semiconductors
BLF6G10LS-135R
Power LDMOS transistor
1.3 Applications
I RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 800 MHz to 1000 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
1
3
[1]
2
1
2
3
sym112
Table 3. Ordering information
Type number
Package
Name Description
BLF6G10LS-135R -
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502B
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
drain-source voltage
VGS
gate-source voltage
ID
drain current
Tstg
storage temperature
Tj
junction temperature
Min Max Unit
-
65 V
−0.5 +13 V
-
32 A
−65 +150 °C
-
225 °C
5. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter
Rth(j-case) thermal resistance from junction to case
Conditions
Tcase = 80 °C; PL = 25 W
Typ Unit
0.56 K/W
BLF6G10LS-135R_1
Product data sheet
Rev. 01 — 17 November 2008
© NXP B.V. 2008. All rights reserved.
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