BLF277 Просмотр технического описания (PDF) - Philips Electronics
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BLF277 Datasheet PDF : 13 Pages
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Philips Semiconductors
VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION
Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 16 Ω; unless otherwise specified.
RF performance in CW operation in a common source class-B test circuit.
MODE OF OPERATION
CW, class-B
f
VDS
IDQ
(MHz)
(V)
(A)
175
50
0.1
Ruggedness in class-B operation
The BLF277 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases under the
following conditions:
VDS = 50 V; f = 175 MHz at rated load power.
Product specification
BLF277
PL
Gp
ηD
(W)
(dB)
(%)
150
> 14
> 50
typ. 17 typ. 58
handbook,2h5alfpage
Gp
(dB)
20
Gp
15
ηD
10
MGP224
100
ηD
(%)
80
60
40
5
20
0
0
50
100
150
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
ZL = 1.4 + j1.6 Ω; f = 175 MHz.
0
200
250
PL (W)
Fig.9 Power gain and efficiency as functions of
load power, typical values.
200
handbook, halfpage
PL
(W)
150
MGP225
100
50
0
0
2
4
6
8
PIN (W)
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
ZL = 1.4 + j1.6 Ω; f = 175 MHz.
Fig.10 Load power as a function of input power,
typical values.
September 1992
6
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