BLF277 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BLF277 Datasheet PDF : 13 Pages
| |||
Philips Semiconductors
VHF power MOS transistor
Product specification
BLF277
handbook,1h0alfpage
Zi
(Ω)
ri
0
xi
MGP226
−10
0
50
100
150
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
RGS = 16 Ω; PL = 150 W.
200
250
f (MHz)
Fig.13 Input impedance as a function of frequency
(series components), typical values.
handbook,1h0alfpage
ZL
(Ω)
8
RL
6
MGP227
4
XL
2
0
0
50
100
150
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
RGS = 16 Ω; PL = 150 W.
200
250
f (MHz)
Fig.14 Load impedance as a function of frequency
(series components), typical values.
handbook, halfpage
Zi
ZL MBA379
Fig.15 Definition of MOS impedance.
September 1992
handbook,4h0alfpage
Gp
(dB)
30
MGP228
20
10
0
0
50
100
150
200
250
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 0.1 A;
RGS = 16 Ω; PL = 150 W.
Fig.16 Power gain as a function of frequency,
typical values.
11
Share Link: 