BFS520 Просмотр технического описания (PDF) - NXP Semiconductors.
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BFS520 Datasheet PDF : 13 Pages
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NXP Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFS520
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for wideband
applications such as satellite TV
tuners, cellular phones, cordless
phones, pagers etc., with signal
frequencies up to 2 GHz.
PINNING
PIN
DESCRIPTION
Code: N2
1 base
2 emitter
3 collector
handbook, 2 columns
3
1
Top view
2
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCBO
VCES
IC
Ptot
hFE
fT
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
GUM
maximum unilateral power gain
F
noise figure
CONDITIONS
open emitter
RBE = 0
up to Ts = 118 C; note 1
IC = 20 mA; VCE = 6 V; Tj = 25 C
IC = 20 mA; VCE = 6 V; f = 1 GHz;
Tamb = 25 C
Ic = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C
Ic = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 C
MIN.
60
TYP.
120
9
15
1.1
MAX. UNIT
20
V
15
V
70
mA
300 mW
250
GHz
dB
1.6 dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
VCES
VEBO
IC
Ptot
Tstg
Tj
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
RBE = 0
open collector
up to Ts = 118 C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN.
65
MAX. UNIT
20
V
15
V
2.5
V
70
mA
300 mW
150 C
175 C
September 1995
2
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