BF824 Просмотр технического описания (PDF) - Philips Electronics
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BF824 Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP medium frequency transistor
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VBE
base-emitter voltage
Cre
feedback capacitance
fT
transition frequency
CONDITIONS
IE = 0; VCB = −30 V
IC = 0; VEB = −4 V
IC = −1 mA; VCE = −10 V
IC = −4 mA; VCE = −10 V
IC = −4 mA; VCE = −10 V
IC = 0; VCE = −10 V; f = 1 MHz
VCE = −10 V; f = 100 MHz
IC = −1 mA
IC = −4 mA
IC = −8 mA
Product specification
BF824
MIN.
−
−
25
25
−
−
TYP.
−
−
45
50
−
−
MAX.
−50
−100
−
−
−900
0.3
UNIT
nA
nA
mV
pF
250 350 −
400 450 −
390 440 −
MHz
MHz
MHz
1999 Apr 15
3
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