BF247B Просмотр технического описания (PDF) - Philips Electronics
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BF247B Datasheet PDF : 5 Pages
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Philips Semiconductors
N-channel silicon junction
field-effect transistors
Product specification
BF246A; BF246B; BF246C;
BF247A; BF247B; BF247C
FEATURES
• Interchangeability of drain and source connections
• High IDSS range
• Frequency up to 450 MHz.
APPLICATIONS
• VHF and UHF amplifiers
• Mixers
• General purpose switching.
DESCRIPTION
General purpose N-channel symmetrical silicon junction
field-effect transistors in a plastic TO-92 variant package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN
SYMBOL
DESCRIPTION
BF246A; BF246B; BF246C
1
d
drain
2
g
gate
3
s
source
BF247A; BF247B; BF247C
1
d
drain
2
s
source
3
g
gate
1
handbook, halfpage2
3
d
g
s
MAM257
Fig.1 Simplified outline (TO-92 variant)
and symbol.
QUICK REFERENCE DATA
SYMBOL
VDS
VGSoff
IDSS
Ptot
yfs
Crs
Tj
PARAMETER
drain-source voltage
gate-source cut-off voltage
drain current
BF246A; BF247A
BF246B; BF247B
BF246C; BF247C
total power dissipation
forward transfer admittance
reverse transfer capacitance
operating junction temperature
CONDITIONS
ID = 10 nA; VDS = 15 V
VDS = 15 V; VGS = 0
up to Tamb = 50 °C
ID = 10 mA; VDS = 15 V;
f = 1 kHz
ID = 10 mA; VDS = 15 V;
f = 1 MHz
MIN.
−
−0.6
TYP.
−
−
MAX.
±25
−14.5
UNIT
V
V
30
−
60
−
110
−
−
−
8
−
−
3.5
−
−
80
mA
140
mA
250
mA
400
mW
−
mS
−
pF
150
°C
1996 Jul 29
2
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