BF1005W Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

производитель

BF1005W

Silicon N-Channel MOSFET Tetrode

Infineon Technologies 

BF1005...

Electrical Characteristics

Parameter

Symbol

AC Characteristics (verified by random sampling)

Forward transconductance

gfs

VDS = 5 V, VG2S = 4.5 V

Gate1 input capacitance

VDS = 5 V, VG2S = 4 V, f = 1 MHz

Output capacitance

VDS = 5 V, VG2S = 4 V, f = 100 MHz

Cg1ss

Cdss

Power gain (self biased)

Gp

VDS = 5 V, VG2S = 4 V, f = 800 MHz

Noise figure

F

VDS = 5 V, VG2S = 4 V, f = 800 MHz

Gain control range

∆Gp

VDS = 5 V, VG2S = 4V ...0V, f = 800 GHz

Values

Unit

min. typ. max.

20 24

- mS

-

2.1 2.5 pF

-

1.3

-

17 19

- dB

-

1.6 2.5 dB

40 50

-

3

Feb-18-2004

Share Link: