BD900A Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

BD900A

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

BD896A/898A/900A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

BD896A

-45

V(BR)CEO

Collector-emitter

breakdown voltage

BD898A IC=-100mA, IB=0

-60

V

BD900A

-80

VCEsat Collector-emitter saturation voltage IC=-4A ,IB=-16mA

-2.8

V

VBE

Base-emitter on voltage

IC=-4A ; VCE=-3V

-2.5

V

ICBO

Collector

cut-off current

BD896A

BD898A

BD900A

VCB=-45V, IE=0

TC=100℃

VCB=-60V, IE=0

TC=100℃

VCB=-80V, IE=0

TC=100℃

-0.2

-2.0

-0.2

-2.0

mA

-0.2

-2.0

BD896A VCE=-30V, IB=0

固I电NC半H导A体NGE SEMICONDUCTOR ICEO

Collector

cut-off current

BD898A VCE=-30V, IB=0

BD900A VCE=-40V, IB=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-4A ; VCE=-3V

VEC

Diode forward voltage

IE=-8A

-0.5 mA

-2

mA

750

-3.5

V

ton

Turn-on time

IC=3A ; IB1=-IB2=12mA

1

μs

toff

Turn-off time

VBE=-3.5V;RL=10Ω;tp=20μs

5

μs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Thermal resistance junction to case

MAX

1.79

UNIT

℃/W

2

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