BD312 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

BD312

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

BD312

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=-0.2A ; IB=0

VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A

VBEsat

Base-emitter saturation voltage

VBE

Base-emitter on voltage

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

IC=-5A ;IB=-0.5A

IC=-5A ;VCE=-4V

VCB=rated;IE=0

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-5A ; VCE=-4V

hFE-2

fT

DC current gain

Transition frequency

IC=-10A ; VCE=-4V

IC=-0.5A ; VCE=-10V,f=1MHz

MIN TYP. MAX UNIT

-60

V

-1.0

V

-1.8

V

-1.5

V

-1.0 mA

-1.0 mA

25

5

4

MHz

2

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