BCY87 Просмотр технического описания (PDF) - Philips Electronics
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BCY87 Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
BCY87; BCY88; BCY89
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
MIN.
−
−
−
−
−
−65
−
MAX.
45
40
5
30
150
+150
175
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient in free air
VALUE
1
UNIT
K/mW
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per transistor
ICBO
ICBO
hFE
hFE
Cc
fT
collector cut-off current
BCY87
BCY88
collector cut-off current
BCY89
DC current gain
BCY87
BCY88
BCY89
DC current gain
collector capacitance
transition frequency
F
noise figure
F
noise figure
BCY87
BCY88; BCY89
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = 20 V; Tamb = 90 °C
−
−
−
−
IE = 0; VCB = 20 V
−
−
VCE = 10 V
IC = 5 µA
IC = 500 µA
80 −
120 −
IC = 10 mA
100 −
IC = 50 µA; VCE = 10 V
100 −
IE = ie = 0; VCB = 10 V; f = 1 MHz −
−
IE = −50 µA; VCE = 10 V;
f = 100 MHz
10 −
IE = −500 µA; VCE = 10 V;
f = 100 MHz
50 −
IC = 200 µA; VCE = 5 V;
−
−
RS = 2 kΩ; f = 10 Hz to 15.7 kHz
IC = 200 µA; VCE = 5 V;
RS = 2 kΩ; f = 1 kHz; B = 200 Hz −
−
−
−
5
nA
20 nA
10 nA
−
600
600
450
3.5 pF
−
MHz
−
MHz
4
dB
4
dB
5
dB
1997 Jun 20
3
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