BCY79IX Просмотр технического описания (PDF) - Philips Electronics
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BCY79IX Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP switching transistors
Product specification
BCY78; BCY79
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
F
noise figure
IC = −200 µA; VCE = −5 V; RS = 2 kΩ; −
−
10 dB
f = 1 kHz; B = 200 Hz
Switching times (between 10% and 90% levels); see Fig.2
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ton
turn-on time
td
delay time
tr
rise time
toff
turn-off time
ts
storage time
tf
fall time
ICon = −10 mA; IBon = −1 mA;
IBoff = 1 mA; test conditions A
ICon = −100 mA; IBon = −10 mA;
IBoff = 10 mA; test conditions B
−
−
100 ns
−
−
50 ns
−
−
50 ns
−
−
700 ns
−
−
600 ns
−
−
100 ns
−
−
100 ns
−
−
35 ns
−
−
65 ns
−
−
400 ns
−
−
300 ns
−
−
100 ns
ndbook, full pagewidth
VBB
VCC
(probe)
oscilloscope
450 Ω
Vi
RB
R2
R1
RC
Vo
(probe)
oscilloscope
450 Ω
DUT
MGD624
Test conditions A
Vi = −5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 2.5 kΩ; RB = 3.9 kΩ; RC = 270 Ω.
VBB = 1.9 V; VCC = −3 V
Oscilloscope input impedance Zi = 50 Ω.
Test conditions B
Vi = −9.8 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 62 Ω; R2 = 470 Ω; RB = 470 Ω; RC = 100 Ω.
VBB = 3.4 V; VCC = −10.8 V
Oscilloscope input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1997 Jun 18
5
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