BCW61C(2003) Просмотр технического описания (PDF) - Diotec Semiconductor Germany
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BCW61C Datasheet PDF : 2 Pages
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General Purpose Transistors
BCW 61
Characteristics (Tj = 25/C)
Base saturation voltage – Basis-Sättigungsspannung 1)
- IC = 10 mA, - IB = 0.25 mA
- VBEsat
- IC = 50 mA, - IB = 1.25 mA
- VBEsat
DC current gain – Kollektor-Basis-Stromverhältnis 3)
- VCE = 5 V, - IC = 10 :A
BCW 61B hFE
BCW 61C hFE
BCW 61D hFE
BCW 61B hFE
- VCE = 5 V, - IC = 2 mA
BCW 61C hFE
BCW 61D hFE
BCW 61B hFE
- VCE = 1 V, - IC = 50 mA
BCW 61C hFE
BCW 61D hFE
Base-Emitter voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V, - IC = 10 :A
- VBEon
- VCE = 5 V, - IC = 2 mA
- VBEon
- VCE = 1 V, - IC = 50 mA
- VBEon
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE = ie = 0, f = 1 MHz
CCB0
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEB0
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 :A, RG = 2 kS,
f = 1 kHz, )f = 200 Hz
F
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
600 mV
700 mV
–
850 mV
–
1050 mV
30
–
–
40
–
–
100
–
–
180
–
310
250
–
460
380
–
630
80
–
–
90
–
–
100
–
–
–
600 mV
–
550 mV
650 mV
720 mV
–
750 mV
–
100 MHz
–
–
–
4.5 pF
–
–
11 pF
–
–
2 dB
6 dB
RthA
420 K/W 4)
BCW 60 series
Marking – Stempelung
BCW 61B = BB BCW 61C = BC BCW 61D = BD
3) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
4) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
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