BCP68T1G(2011) Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

BCP68T1G
(Rev.:2011)

MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT

ON Semiconductor 

BCP68T1G, SBCP68T1G

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (IC = 100 mAdc, IE = 0)

Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)

Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

Collector−Base Cutoff Current (VCB = 25 Vdc, IE = 0)

Emitter−Base Cutoff Current (VEB = 5.0 Vdc, IC = 0)

ON CHARACTERISTICS

V(BR)CES

25

−

V(BR)CEO

20

−

V(BR)EBO

5.0

−

ICBO

−

−

IEBO

−

−

−

Vdc

−

Vdc

−

Vdc

10

mAdc

10

mAdc

DC Current Gain

(IC = 5.0 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 Adc, VCE = 1.0 Vdc)

hFE

50

85

60

Collector−Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc)

VCE(sat)

−

Base−Emitter On Voltage (IC = 1.0 Adc, VCE = 1.0 Vdc)

VBE(on)

−

DYNAMIC CHARACTERISTICS

−

−

−

−

375

−

−

−

0.5

Vdc

−

1.0

Vdc

Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc)

fT

−

60

−

MHz

300

200

100

10

1.0

TYPICAL ELECTRICAL CHARACTERISTICS

300

TJ = 125C

= 25C

= - 55C

VCE = 1.0 V

10

100

1000

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

200

100

70

VCE = 10 V

TJ = 25C

50

f = 30 MHz

3010

100 200

1000

IC, COLLECTOR CURRENT (mA)

Figure 2. Current-Gain-Bandwidth Product

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