BC849C Просмотр технического описания (PDF) - Philips Electronics
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производитель
BC849C Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistors
Product specification
BC849; BC850
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
500
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
hFE
VCEsat
VBEsat
emitter cut-off current
DC current gain
BC849B; BC850B
BC849C; BC850C
DC current gain
BC849B; BC850B
BC849C; BC850C
collector-emitter saturation
voltage
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
Ce
emitter capacitance
fT
transition frequency
F
noise figure
CONDITIONS
MIN. TYP. MAX. UNIT
IE = 0; VCB = 30 V
IE = 0; VCB = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
IC = 10 µA; VCE = 5 V;
see Figs 2 and 3
−
−
15 nA
−
−
5
µA
−
−
100 nA
−
240 −
−
450 −
IC = 2 mA; VCE = 5 V;
see Figs 2 and 3
200 290 450
420 520 800
IC = 10 mA; IB = 0.5 mA
−
90 250 mV
IC = 100 mA; IB = 5 mA
−
200 600 mV
IC = 10 mA; IB = 0.5 mA; note 1
−
700 −
mV
IC = 100 mA; IB = 5 mA; note 1
−
900 −
mV
IC = 2 mA; VCE = 5 V; note 2
580 660 700 mV
IC = 10 mA; VCE = 5 V; note 2
−
−
770 mV
IE = ie = 0; VCB = 10 V; f = 1 MHz −
2.5 −
pF
IC = ic = 0; VEB = 500 mV; f = 1 MHz −
11 −
pF
IC = 10 mA; VCE = 5 V; f = 100 MHz 100 −
−
MHz
IC = 200 µA; VCE = 5 V; RS = 2 kΩ; −
−
4
dB
f = 10 Hz to 15.7 kHz
IC = 200 µA; VCE = 5 V; RS = 2 kΩ; −
−
4
dB
f = 1 kHz; B = 200 Hz
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
1999 Apr 08
3
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