Philips Semiconductors
NPN general purpose transistors
Product specification
BC849; BC850
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• General purpose switching and amplification.
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
DESCRIPTION
NPN transistor in a SOT23 plastic package.
handbook, halfpage
3
PNP complements: BC859 and BC860.
3
MARKING
TYPE
NUMBER
BC849B
BC849C
MARKING TYPE
CODE(1) NUMBER
2B∗
BC850B
2C∗
BC850C
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
MARKING
CODE(1)
2F∗
2G∗
1
Top view
1
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BC849
BC850
collector-emitter voltage
BC849
BC850
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
MAX.
UNIT
−
30
V
−
50
V
−
30
V
−
45
V
−
5
V
−
100
mA
−
200
mA
−
200
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C
1999 Apr 08
2