BC847PNQ-7-F(2013) Просмотр технического описания (PDF) - Diodes Incorporated.
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BC847PNQ-7-F Datasheet PDF : 6 Pages
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BC847PN
Electrical Characteristics: NPN, BC847B Type (Q1) (@TA = +25°C unless otherwise specified.)
Characteristic (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Voltage
Collector-Cutoff Current
Gain Bandwidth Product
Collector-Base Capacitance
Noise Figure
Symbol Min
Typ
Max
Unit
Test Condition
BVCBO
50
—
—
V
IC = 100µA, IB = 0
BVCEO
45
—
—
V
IC = 10mA, IB = 0
BVEBO
6
—
—
V
IE = 100µA, IC = 0
hFE
200
290
450
—
VCE = 5.0V, IC = 2.0mA
VCE(sat)
—
90
200
250
600
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VBE(sat)
—
700
900
—
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
VBE(on)
580
—
660
—
700
720
mV
VCE = 5.0V, IC = 2.0mA
VCE = 5.0V, IC = 10mA
ICBO
—
—
—
—
15
nA VCB = 30V
5.0
µA VCB = 30V, TA = +150°C
fT
100
300
—
MHz
VCE = 5.0V, IC = 10mA,
f = 100MHz
CCBO
—
3.5
6.0
pF VCB = 10V, f = 1.0MHz
VCE = 5V, IC = 200µA,
NF
—
2.0
10
dB RG = 2.0kΩf = 1.0kHz,
f = 200Hz
Note:
7. Short duration pulse test used to minimize self-heating effect.
1,000
0.5
IC
IB = 20
0.4
100
0.3
10
1
0.01
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 2. Typical DC Current Gain vs. Collector Current
(BC847B Type)
f = 1MHz
0.2
TA = 100°C
0.1
TA = 25°C
0
TA = -50°C
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 3. Typical Collector-Emitter Saturation Voltage
vs. Collector Current (BC847B Type)
1,000 TA = 25°C
VCE = 10V
10
6
Cibo
100
VCE =5V
VCE = 2V
Cobo
VR, REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance Characteristics (BC847B Type)
10
0.1
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Figure 5. Typical Gain-Bandwidth Product
vs. Collector Current (BC847B Type)
BC847PN
Document number: DS30278 Rev. 13 - 2
3 of 6
www.diodes.com
November 2013
© Diodes Incorporated
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