BB404M Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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BB404M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

Hitachi -> Renesas Electronics 

BB404M

Build in Biasing Circuit MOS FET IC

UHF/VHF RF Amplifier

ADE-208-717A (Z)

2nd. Edition

Dec. 1998

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• High gain;

(PG = 29 dB typ. at f = 200 MHz)

• Low noise characteristics;

(NF = 1.2 dB typ. at f = 200 MHz)

• Wide supply voltage range;

Applicable with 5V to 9V supply voltage.

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; MPAK-4R(SOT-143 var.)

Outline

MPAK-4R

3

4

2

1

1. Source

2. Drain

3. Gate2

4. Gate1

Notes: 1. Marking is “DX–”.

2. BB404M is individual type number of HITACHI BBFET.

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