BAV20W-V Просмотр технического описания (PDF) - Vishay Semiconductors
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BAV20W-V Datasheet PDF : 6 Pages
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BAV19W-V / 20W-V / 21W-V
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Continuous reverse voltage
Repetitive peak voltage
DC Forward current
Tamb = 25 °C
Rectified current (average) half Tamb = 25 °C
wave rectification with resist.
load
Repetitive peak forward current
Surge forward current
f ≥ 50 Hz, θ = 180 °,
Tamb = 25 °C
t < 1 s, Tj = 25 °C
Power dissipation
Tamb = 25 °C
1) Valid provided that leads are kept at ambient temperature
Part
Symbol
Value
Unit
BAV19W-V
VR
100
V
BAV20W-V
VR
150
V
BAV21W-V
VR
200
V
BAV19W-V
VRRM
120
V
BAV20W-V
VRRM
200
V
BAV21W-V
VRRM
250
V
IF
2501)
mA
IF(AV)
2001)
mA
IFRM
6251)
mA
IFSM
1
A
Ptot
4101)
mW
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Test condition
Storage temperature range
1) Valid provided that leads are kept at ambient temperature
Symbol
RthJA
Tj
TS
Value
3751)
1501)
- 65 to + 1501)
Unit
°C/W
°C
°C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 100 mA
IF = 200 mA
Leakage current
VR = 100 V
VR = 100 V, Tj = 100 °C
VR = 150 V
VR = 150 V, Tj = 100 °C
VR = 200 V
VR = 200 V, Tj = 100 °C
Dynamic forward resistance
IF = 10 mA
Diode capacitance
VR = 0, f = 1 MHz
Reverse recovery time
IF = 30 mA, IR = 30 mA,
Irr = 3 mA, RL = 100 Ω
Part
Symbol Min
Typ.
Max
Unit
VF
1.00
V
VF
1.25
V
BAV19W-V
IR
100
nA
BAV19W-V
IR
15
µA
BAV20W-V
IR
100
nA
BAV20W-V
IR
15
µA
BAV21W-V
IR
100
nA
BAV21W-V
IR
15
µA
rf
5
Ω
Ctot
1.5
pF
trr
50
ns
www.vishay.com
2
Document Number 85725
Rev. 1.2, 22-Jul-05
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