BAP51LX(2007) Просмотр технического описания (PDF) - NXP Semiconductors.
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BAP51LX Datasheet PDF : 8 Pages
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NXP Semiconductors
Table 6. Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Lins
insertion loss
see Figure 4; IF = 0.5 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
see Figure 4; IF = 1 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
see Figure 4; IF = 10 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
Lins
insertion loss
see Figure 4; IF = 100 mA;
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
τL
charge carrier life time when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω; measured at
IR = 3 mA
LS
series inductance
IF = 100 mA; f = 100 MHz
BAP51LX
Silicon PIN diode
Min Typ Max Unit
-
0.36 -
dB
-
0.36 -
dB
-
0.38 -
dB
-
0.25 -
dB
-
0.26 -
dB
-
0.27 -
dB
-
0.12 -
dB
-
0.14 -
dB
-
0.15 -
dB
-
0.09 -
dB
-
0.10 -
dB
-
0.12 -
dB
-
0.55 -
µs
-
0.4
-
nH
400
Cd
(fF)
300
200
100
001aag633
102
rD
(Ω)
10
1
001aag634
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig 1. Diode capacitance as a function of reverse
voltage; typical values
10−1
10−1
1
10
102
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig 2. Forward resistance as a function of forward
current; typical values
BAP51LX_1
Product data sheet
Rev. 01 — 26 June 2007
© NXP B.V. 2007. All rights reserved.
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