AV2001 Просмотр технического описания (PDF) - Avic Technology
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AV2001 Datasheet PDF : 3 Pages
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@vic
TO-92 Plastic-Encapsulate Transistors
AV2001
AV2001 TRANSISTOR（NPN ）
FEATURES
Power dissipation
PCM : 0.6
Collector current
ICM : 0.7
Collector-base voltage
V(BR)CBO : 30
W （Tamb=25℃）
A
V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
TO— 92
1. EMITTER
2. COLLECTOR
3. BASE
123
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE
Rank
Range
M
90-180
Symbol Test conditions
V(BR)CBO Ic=1００µA ， IE=0
V(BR)CEO IC=10mA , IB=0
V(BR)EBO IE=100µA， IC=0
ICBO
VCB=30 V , IE=0
ICEO
VCE=20 V , IB=0
IEBO
VEB=5 V , IC=0
hFE
VCE=1V, IC=100m A
VCE(sat) IC=700mA, IB= 70m A
VBE(sat)
fT
IC= 700mA, IB=70mA
VCE=6V, IC= 10mA
f = 30MHz
MIN MAX UNIT
30
V
25
V
5
V
0.1
µA
0.1
µA
0.1
µA
90
400
0.6
V
1.2
V
50
MHz
L
135-270
K
200-400
Copyright @vic Electronics Corp.
1
Website http://www.avictek.com
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