AT45DB161E Просмотр технического описания (PDF) - Atmel Corporation
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AT45DB161E
Atmel Corporation
AT45DB161E Datasheet PDF : 70 Pages
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6.4 Main Memory Page Program through Buffer with Built in Erase
This operation is a combination of the Buffer Write and Buffer to Main Memory Page Program with Built-In Erase
operations. Data is first clocked into Buffer 1 or Buffer 2 from the input pin (SI) and then programmed into a specified
page in the main memory.
To perform a Main Memory Page Program through Buffer using the standard DataFlash page size (528 bytes), an
opcode 82h for Buffer 1 or 85h for Buffer 2 must first be clocked into the device followed by three address bits comprised
of two dummy bits, 12 page address bits (PA11 - PA0) that specify the page in the main memory to be written, and 10
buffer address bits (BFA9 - BFA0) that select the first byte in the buffer to be written.
To perform a Main Memory Page Program through Buffer using the binary page size (512 bytes), an opcode 82h for
Buffer 1 or 85h for Buffer 2 must first be clocked into the device followed by three address bytes comprised of three
dummy bits, 12 page address bits (A20 - A9) that specify the page in the main memory to be written, and nine buffer
address bits (BFA8 - BFA0) that selects the first byte in the buffer to be written.
After all address bytes are clocked in, the part will take data from the input pin (SI) and store it in the specified data buffer.
If the end of the buffer is reached, the device will wrap around back to the beginning of the buffer. When there is a
low-to-high transition on the CS pin, the device will first erase the selected page in main memory (the erased state is a
Logic 1) and then program the data stored in the buffer into that main memory page. Both the erasing and the
programming of the page are internally self-timed and should take place in a maximum time of tEP. During this time, the
RDY/BUSY bit in the Status Register will indicate that the device is busy.
The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to erase or
program properly. If an erase programming error arises, it will be indicated by the EPE bit in the Status Register.
6.5 Main Memory Byte/Page Program through Buffer 1 without Built-In Erase
This operation is a combination of the Buffer Write and Buffer to Main Memory Program without Built-In Erase operations
to allow any number of bytes (1 to 512/528 bytes) to be programmed directly into previously erased locations in the main
memory. Data is first clocked into Buffer 1 from the input pin (SI) and then programmed into specified byte locations in
the main memory. Multiple bytes up to the page size can be entered with one command sequence.
To perform a Main Memory Byte/Page Program through Buffer 1 using the standard DataFlash page size (528 bytes), an
opcode 02h must first be clocked into the device followed by three address bytes comprised of two dummy bits,
12 page address bits (PA11 - PA0) that specify the page in the main memory to be written, and 10 buffer address bits
(BFA9 - BFA0) that select the first byte in the buffer to be written. After all address bytes are clocked in, the device will
take data from the input pin (SI) and store it in Buffer 1. Any number of bytes (1 to 528) can be entered. If the end of the
buffer is reached, then the device will wrap around back to the beginning of the buffer.
To perform a Main Memory Byte/Page Program through Buffer 1 using the binary page size (512 bytes), an opcode 02h
for Buffer 1 using must first be clocked into the device followed by three address bytes comprised of three dummy bits,
12 page address bits (A20 - A9) that specify the page in the main memory to be written, and nine buffer address bits
(BFA8 - BFA0) that selects the first byte in the buffer to be written. After all address bytes are clocked in, the device will
take data from the input pin (SI) and store it in Buffer 1. Any number of bytes (1 to 512) can be entered. If the end of the
buffer is reached, then the device will wrap around back to the beginning of the buffer. When using the binary page size,
the page and buffer address bits correspond to a 21-bit logical address (A20-A0) in the main memory.
After data bytes have been clocked into the device, a low-to-high transition on the CS pin will start the program operation
in which the device will program the data stored in Buffer 1 into the Main Memory Array. Only the data bytes that were
clocked into the device will be programmed into the main memory.
Example: If only two data bytes were clocked into the device, then only two bytes will be programmed into main
memory and the remaining bytes in the Main Memory Page will remain in their previous state.
Atmel AT45DB161E [PRELIMINARY DATASHEET] 11
8782A–DFLASH–3/12
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