AS5011
Data Sheet
8.2 Operating conditions
(operating conditions: Tamb = -20 to +80°C, VDD = 3.3V)
Parameter
Core Supply voltage
Peripheral Supply voltage
Current consumption on core
supply,
Shutdown mode
Current consumption on core
supply,
Low Power mode
Current consumption on core
supply,
Full Power mode
Symbol Min
VDD 2.7
VDDp 1.8
Typ Max
3.6
VDD
+0.3
IDDs
50
IDDl
200
IDDf
8
Current consumption on IO supply IDDp
1
Polling clock rate, Shutdown mode tP,W
Polling clock rate, Low Power
mode
tP,A
Coordinate conversion time
tconv
65.6 80 94.4
16.4 20 23.6
330 380 455
lateral movement radius
dx
dy
±1.8
2
±2.3
type of magnet
Hall array diameter
d
2
3
RH
2.2
magnetic field strength
BZ
30
120
Ambient temperature range
Magnetic field measurement
resolution
Resolution of XY displacement
IC package
Power supply filtering capacitors
Tamb -20
+80
11
8
QFN16
5x5x0.55mm
100
100
Unit
Note
V
V
open drain outputs : SCL, SDA,
INT/
average current pin VDD
µA pulsed current IDDf during tconv
with period tP,W
average current pin VDD
µA pulsed current IDDf during tconv
with period tP,A
mA continuous current pin VDD
average current pin VDDp, 20ms
µA i²C polling, 47k pullup resistor on
SDA
ms internal
ms internal
µs Full Power mode
vertical magnetic field at magnet
mm centre, measured at the chip
surface
mm cylindrical; axial magnetized
mm
mT
vertical magnetic field at magnet
center; measured at chip surface
°C
bit Internal
bit over 2*dx and 2*dy axis
nF Ceramic capacitor VDD - VSS
nF Ceramic capacitor VDDp - VSS
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