AOB442 Просмотр технического описания (PDF) - Alpha and Omega Semiconductor
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AOB442 Datasheet PDF : 7 Pages
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AOB442
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
40
V
IDSS
Zero Gate Voltage Drain Current
VDS=40V, VGS=0V
TJ=55°C
10
µA
50
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
100 nA
VGS(th) Gate Threshold Voltage
VDS=5V ID=250µA
1.3 1.8 2.3
V
ID(ON)
On state drain current
VGS=10V, VDS=5V
380
A
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=20A
TJ=125°C
3.4 4.2
mΩ
5.3 6.4
VGS=4.5V, ID=20A
4.2 5.3 mΩ
gFS
Forward Transconductance
VDS=5V, ID=20A
95
S
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.65 1
V
IS
Maximum Body-Diode Continuous Current
105
A
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
3730 4666 5600 pF
520 744 970 pF
160 269 375 pF
0.5
1
1.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
60
75
90
nC
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
VGS=10V, VDS=20V, ID=20A
28
36
45
nC
8.5 10.5 12.5 nC
Qgd
Gate Drain Charge
10
17
25
nC
tD(on)
Turn-On DelayTime
15
ns
tr
Turn-On Rise Time
VGS=10V, VDS=20V, RL=1Ω,
18
ns
tD(off)
Turn-Off DelayTime
RGEN=3Ω
52
ns
tf
Turn-Off Fall Time
23
ns
trr
Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs
13
16
19
ns
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
30
38
45
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: June 2009
www.aosmd.com
Page 2 of 7
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