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AM80912-030

RF & MICROWAVE TRANSISTORS SPECIALITY AVIONICS/JTIDS APPLICATIONS

STMicroelectronics 

AM80912-030

RF & MICROWAVE TRANSISTORS

SPECIALITY AVIONICS/JTIDS APPLICATIONS

........ REFRACTORY/GOLD METALLIZATION

EMITTER SITE BALLASTED

15:1 VSWR CAPABILITY

LOW RF THERMAL RESISTANCE

INPUT/OUTPUT MATCHING

OVERLAY GEOMETRY

METAL/CERAMIC HERMETIC PACKAGE

POUT = 30 W MIN. WITH 7.8 dB GAIN

.400 x .400 2LFL (S036)

hermetically sealed

ORDER CODE

AM80912-030

BRANDING

80912-30

DESCRIPTION

The AM80912-030 device is a high power Class C

transistor specifically designed for JTIDS pulsed out-

put and driver applications.

This device is capable of operation over a wide range

of pulse widths, duty cycles and temperatures and is

capable of withstanding 15:1 output VSWR at rated

RF conditions.

Low RF thermal resistance and computerized auto-

matic wire bonding techniques ensure high reliability

and product consistency.

The AM80912-030 is supplied in the hermetic met-

al/ceramic package with internal input matching

structures.

PIN CONNECTION

1. Collector

2. Base

3. Emitter

4. Base

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symb ol

PDISS

Pa ra met er

Power Dissipation* (TC ≤ 85°C)

IC

Collector Current*

VCC

Collector-Supply Voltage*

TJ

Junction Temperature (Pulsed RF Operation)

TSTG

Storage Temperature

Value

75

Unit

W

3.5

A

40

V

250

°C

− 65 to +200

°C

THERMAL DATA

RTH(j-c) Junction-Case Thermal Resistance

*Applies only to rated RF amplifier operation.

August 1992

2.2

°C/W

1/6

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