MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
Figure 6.42 Interface Circuit for Single IPMs
15 V +
IPM
INPUT
FAULT
+
C1
6.8k
0.1µF
V1
SR C
C2
C1
D
VC E
FO
15V +
IPM
V1
SR C
C2
C1
D
VC E
FO
15V +
IPM
V1
SR C
C2
C1
D
VC E
FO
INPUT
FAULT
15 V +
IPM
+
C1
6.8k
0.1µF
V1
SR C
C1
D
C2
VC E
C3
FO
15V +
IPM
V1
SR C
C1
D
C2
VC E
C3
FO
15V +
IPM
V1
SR C
C1
D
C2
VC E
C3
FO
+
U
V
W
VCC
MOTOR
Applicable
Types
Control Power
Main Bus
Rated Decoupling Snubber Decoupling
Current Capacitor Capacitor Capacitor
(Amps)
(C1)
(C2)
(C3)
Snubber Diode
600V Modules
PM800HSA060 800
68µF
3.0µF 6.0µF RM50HG-12S (2 pc. parallel)
1200V Modules
PM400HSA120 400
PM600HSA120 600
PM800HSA120 800
68µF
68µF
68µF
1.5µF
2.0µF
3.0µF
4.0µF
6.0µF
6.0µF
RM25HG-24S
RM25HG -24S (2 pc. parallel)
RM25HG-24S (3 pc. parallel)
Sep.1998