28F020 Просмотр технического описания (PDF) - Intel

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28F020

2048K (256K x 8) CMOS FLASH MEMORY

Intel 

28F020

DC CHARACTERISTICS CMOS COMPATIBLE Commercial Products

Symbol

Parameter

Limits

Notes

Unit

Min Typ(3) Max

Test Conditions

ILI

Input Leakage Current

1

ILO

Output Leakage Current

1

ICCS VCC Standby Current

1

ICC1 VCC Active Read Current

1

ICC2 VCC Programming Current 1 2

ICC3 VCC Erase Current

12

ICC4 VCC Program Verify Current 1 2

g1 0

mA VCC e VCC Max

VIN e VCC or VSS

g10

mA VCC e VCC Max

VOUT e VCC or VSS

50

100 mA VCC e VCC Max

CE e VCC g0 2V

10

30

mA VCC e VCC Max CE e VIL

f e 6 MHz IOUT e 0 mA

10

10 mA Programming in Progress

50

15 mA Erasure in Progress

50

15

mA VPP e VPPH

Program Verify in Progress

ICC5 VCC Erase Verify

12

Current

50

15

mA VPP e VPPH

Erase Verify in Progress

IPPS VPP Leakage Current

1

IPP1 VPP Read Current

1

ID Current or

Standby Current

g10 mA VPP s VCC

90

200 mA VPP l VCC

g10

VPP s VCC

IPP2 VPP Programming

12

Current

8

30

mA VPP e VPPH

Programming in Progress

IPP3 VPP Erase Current

12

10

30

mA VPP e VPPH

Erasure in Progress

IPP4 VPP Program Verify

12

Current

20

50

mA VPP e VPPH

Program Verify in Progress

IPP5 VPP Erase Verify

12

Current

20

50

mA VPP e VPPH

Erase Verify in Progress

VIL

Input Low Voltage

VIH

Input High Voltage

VOL Output Low Voltage

VOH1

VOH2

Output High Voltage

VID

A9 Intelligent Identifer

Voltage

b0 5

0 7 VCC

0 85 VCC

VCC b 0 4

11 50

08

V

VCC a 0 5 V

0 45

V VCC e VCC Min

IOL e 5 8 mA

VCC e VCC Min

V IOH e b2 5 mA

VCC e VCC Min

IOH e b100 mA

13 00 V

IID

A9 Intelligent Identifier

12

Current

90

200 mA A9 e VID

VPPL

VPPH

VPP during Read-Only

Operations

VPP during Read Write

Operations

0 00

11 40

65

12 60

V NOTE Erase Programs are

Inhibited when VPP e VPPL

V

VLKO VCC Erase Write Lock

25

V

Voltage

16

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