28F020
DC CHARACTERISTICS TTL NMOS COMPATIBLE Commercial
Products (Continued)
Symbol
Parameter
Limits
Notes
Min Typ(3) Max
Unit
Test Conditions
ICCS VCC Standby Current
1
ICC1 VCC Active Read Current
1
ICC2 VCC Programming Current
12
ICC3 VCC Erase Current
12
ICC4 VCC Program Verify Current
12
03
10
mA VCC e VCC Max
CE e VIH
10
30
mA VCC e VCC Max CE e VIL
f e 6 MHz IOUT e 0 mA
10
10 mA Programming in Progress
50
15 mA Erasure in Progress
50
15
mA VPP e VPPH
Program Verify in Progress
ICC5 VCC Erase Verify Current
12
50
15
mA VPP e VPPH
Erase Verify in Progress
IPPS VPP Leakage Current
1
IPP1 VPP Read Current ID Current 1
or Standby Current
IPP2 VPP Programming Current
12
g10 mA VPP s VCC
90
200 mA VPP l VCC
g10
VPP s VCC
8
30
mA VPP e VPPH
Programming in Progress
IPP3 VPP Erase Current
12
IPP4 VPP Program Verify Current
12
10
30
mA VPP e VPPH
20
50
mA VPP e VPPH
Program Verify in Progress
IPP5 VPP Erase Verify Current
12
20
50
mA VPP e VPPH
Erase Verify in Progress
VIL
Input Low Voltage
VIH
Input High Voltage
VOL Output Low Voltage
VOH1 Output High Voltage
VID
A9 Intelligent Identifer
Voltage
b0 5
20
24
11 50
08
V
VCC a 0 5 V
0 45
V VCC e VCC Min
IOL e 5 8 mA
V VCC e VCC Min
IOH e b2 5 mA
13 00 V
IID
A9 Intelligent Identifier
12
90
200 mA A9 e VID
Current
VPPL
VPPH
VPP during Read-Only
Operations
VPP during Read Write
Operations
0 00
11 40
65
12 60
V NOTE Erase Program are
Inhibited when VPP e VPPL
V
VLKO VCC Erase Write Lock Voltage
25
V
NOTES
1 All currents are in RMS unless otherwise noted Typical values at VCC e 5 0V VPP e 12 0V T e 25 C These currents
are valid for all product versions (packages and speeds)
2 Not 100% tested Characterization data available
3 ‘‘Typicals’’ are not guaranteed but based on a limited number of samples from production lots
15