74LVC1G58GV Просмотр технического описания (PDF) - Philips Electronics
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74LVC1G58GV Datasheet PDF : 18 Pages
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Philips Semiconductors
74LVC1G58
Low-power configurable multiple function gate
Table 13: Transfer characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
Min Typ Max Unit
VH
hysteresis voltage (VT+ − VT−) see Figure 13, 14, 15 and 16
VCC = 1.8 V
0.30 0.48 0.62 V
VCC = 2.3 V
0.40 0.64 0.80 V
VCC = 3.0 V
0.50 0.75 1.00 V
VCC = 4.5 V
0.71 0.97 1.20 V
Tamb = −40 °C to +125 °C
VCC = 5.5 V
0.71 1.13 1.40 V
VT+
positive-going threshold
see Figure 13, 14, 15 and 16
voltage
VCC = 1.8 V
0.67 -
1.20 V
VCC = 2.3 V
1.08 -
1.60 V
VCC = 3.0 V
1.47 -
2.00 V
VCC = 4.5 V
2.13 -
2.74 V
VCC = 5.5 V
2.58 -
3.33 V
VT−
negative-going threshold
see Figure 13, 14, 15 and 16
voltage
VCC = 1.8 V
0.30 -
0.75 V
VCC = 2.3 V
0.58 -
1.03 V
VCC = 3.0 V
VCC = 4.5 V
0.80 -
1.21 -
1.33 V
1.93 V
VCC = 5.5 V
VH
hysteresis voltage (VT+ − VT−) see Figure 13, 14, 15 and 16
VCC = 1.8 V
1.45 -
0.23 -
2.32 V
0.62 V
VCC = 2.3 V
0.34 -
0.80 V
VCC = 3.0 V
0.44 -
1.00 V
VCC = 4.5 V
0.65 -
1.20 V
VCC = 5.5 V
0.65 -
1.40 V
[1] Typical values are measured at Tamb = 25 °C.
15. Waveforms transfer characteristics
VT+
VO
VI
VH
VT−
9397 750 13852
Product data sheet
VH
VT−
VT+
VI
mna207
Fig 13. Transfer characteristics.
VO
mna208
VT+ and VT− limits are at 70 % and
20 %.
Fig 14. Definition of VT+, VT− and VH.
Rev. 01 — 15 September 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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