This product complies with the RoHS Directive (EU 2002/95/EC).
Silicon Junction FETs (Small Signal)
2SK0662 (2SK662)
Silicon N-channel junction FET
For low-frequency and low-noise amplification
■ Features
/ • High mutual conductance gm
e. • Low noise type
e g • SMini type package, allowing downsizing of the sets and auto-
sta matic insertion through the tape/magazine packing
nc d ycle ■ Absolute Maximum Ratings Ta = 25°C
lifec Parameter
Symbol Rating
Unit
a e t Drain-sourse voltage
uc Drain-gate voltage (Source open)
n u rod Drain current
P Gate current
te tin ur . Powerdissipation
g fo pe tion Channel temperature
in ty a Storage temperature
VDS
30
V
VDGO
30
V
ID
20
mA
IG
10
mA
PD
150
mW
Tch
150
°C
Tstg −55 to +150 °C
■ Package
• Code
SMini3-G1
• Pin Name
1: Source
2: Drain
3: Gate
■ Marking Symbol: 1O
ain oncludems afoinllotenwnaanncceteitnyupeedttyyppeedlatest innform ■ Electrical Characteristics Ta = 25°C ± 3°C
c in d te n d t c/e Parameter
Symbol
Conditions
Min Typ Max Unit
d e in co ue ou t/s Drain-source current *
M is tinue lan ma dis tin ab .ne Gate-source cutoff current
p d on RL ic Gate-source cutoff voltage
on ne isc U on Mutual conductance
D /Disc pla d wing anas Short-circuit forward transfer capacitance
ce llo ://p (Common source)
IDSS
IGSS
VGSC
gm1
gm2
Ciss
VDS = 10 V, VGS = 0
VGS = 30 V, VDS = 0
VDS = 10 V, ID = 10 µA
VDS = 10 V, ID = 0.5 mA, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 kHz
VDS = 10 V, VGS = 0, f = 1 MHz
0.5
12 mA
100 nA
0.1
1.5
V
4
mS
4
14
pF
an it fo ttp Reverse transfer capacitance
Crss
n is h (Common source)
3.5
pF
inte e v Noise voltage
NV VDS = 30 V, ID = 1 mA, GV = 80 dB
Rg = 100 kΩ, Function = FLAT
60
mV
a as Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
M Ple 2. *: Rank classification
Rank
P
Q
R
IDSS (mA)
0.5 to 3.0
2.0 to 6.0 4.0 to 12.0
Publication date: May 2008
Note) The part number in the parenthesis shows conventional part number.
SJF00009CED
1