2SK3757(2006) Просмотр технического описания (PDF) - Toshiba
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производитель
2SK3757 Datasheet PDF : 6 Pages
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RDS (ON) – Tc
10
COMMON SOURCE
VGS = 10 V
PULSE TEST
8
6
1.0
ID = 2 A
4
0.5
2
0
−80 −40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
2SK3757
IDR – VDS
10
COMMON SOURCE
Tc = 25°C
3 PULSE TEST
1
0.3
10
0.1
3
0.03
1
VGS = 0, −1 V
0.01
0
−0.2
−0.4
−0.6
−0.8
−1.0
DRAIN−SOURCE VOLTAGE VDS (V)
CAPACITANCE – VDS
1000
Ciss
100
Coss
10
Crss
COMMON SOURCE
VＧＳ = 0V
f = 1MHz
Tc = 25℃
1
0.1
1
10
100
DRAIN−SOURCE VOLTAGE VDS (V)
Vth – Tc
5
COMMON SOURCE
VDS = 10 V
ID = 1 mA
4
PULSE TEST
3
2
1
0
−80
−40
0
40
80
120
160
CASE TEMPERATURE Tc (°C)
PD – Tc
50
40
30
20
10
0
0
40
80
120
160
200
CASE TEMPERATURE Tc (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
500
400
VDS
20
COMMON SOURCE
ID = 2 A
Tc = 25°C
PULSE TEST
16
180
300
12
90
200
VDS = 360 V
8
100
VGS
4
0
0
0
2
4
6
8
10
12
14
TOTAL GATE CHARGE Qg (nC)
4
2006-11-06
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