2SK3604-01L,S,SJ
Characteristics
Allowable Power Dissipation
PD=f(Tc)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Tc [°C]
Typical Output Characteristics
ID=f(VDS):80µs Pulse test,Tch=25°C
60
50
20V
10V
40
8V
30
7.5V
7.0V
20
6.5V
10
6.0V
VGS=5.5V
0
0
2
4
6
8
10
12
VDS [V]
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0.1
1
10
100
ID [A]
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=48V
400
I =9A
350 AS
300
250
I =14A
AS
200
150 I =23A
AS
100
50
0
0
25
50
75
100
125
150
starting Tch [°C]
Typical Transfer Characteristic
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
100
10
1
0.1
0 1 2 3 4 5 6 7 8 9 10
VGS[V]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
0.30
VGS=
5.5V 6.0V 6.5V
0.25
7.0V
7.5V
8V
0.20
10V
0.15
0.10
20V
0.05
0.00
0
10
20
30
40
ID [A]
2