2SK3444 Просмотр технического описания (PDF) - Toshiba
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2SK3444 Datasheet PDF : 6 Pages
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2SK3444
rth – tw
10
1
Duty = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single pulse
0.01
10 μ
100 μ
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.0°C/W
1m
10 m
100 m
1
10
Pulse width tw (S)
Safe operating area
1000
ID max (pulsed) *
100
ID max (continuous)
100 μs*
1 ms*
10
DC operation
Tc = 25°C
1
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
1
10
100
VDSS max
1000
Drain-source voltage VDS (V)
EAS – Tch
500
400
300
200
100
0
25
50
75
100
125
150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 50 V, L = 1.26 mH
Waveform
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5
2009-09-29
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