2SK3444 Просмотр технического описания (PDF) - Toshiba
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производитель
2SK3444 Datasheet PDF : 6 Pages
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RDS (ON) – Tc
160
Common source
VGS = 10 V
Pulse test
120
12
6
ID = 25 A
80
40
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
2SK3444
100
Common source
Tc = 25°C
Pulse test
IDR – VDS
10
10
5
1
3
1 VGS = 0 V
0.1
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
Drain-source voltage VDS (V)
10000
1000
Capacitance – VDS
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Tc = 25°C
10
0.1
1
Crss
10
100
Drain-source voltage VDS (V)
Vth – Tc
6
5
4
3
2
Common source
1 VDS = 10 V
ID = 1 mA
Pulse test
0
−80
−40
0
40
80
120
160
Case temperature Tc (°C)
PD – Tc
200
160
120
80
40
10
0
40
80
120
160
200
Case temperature Tc (°C)
Dynamic input/output characteristics
200
20
Common source
VDS
160
ID = 25 A
Tc = 25°C
16
Pulse test
VDS = 40 V
120
80
12
160
80
VGS
8
40
4
0
0
0
20
40
60
80
100
Total gate charge Qg (nC)
4
2009-09-29
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