2SK3444 Просмотр технического описания (PDF) - Toshiba
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2SK3444 Datasheet PDF : 6 Pages
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Marking
2SK3444
K3444
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Part No. (or abbreviation code)
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Electrical Characteristics (Note 5) (Ta = 25°C)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
|Yfs|
Ciss
Crss
Coss
VGS = ±25 V, VDS = 0 V
VDS = 200 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 12.5 A
VDS = 10 V, ID = 12.5 A
VDS = 10 V, VGS = 0 V, f = 1 MHz
Min Typ. Max Unit
⎯
⎯
±10
μA
⎯
⎯
100
μA
200 ⎯
⎯
V
3.0
⎯
5.0
V
⎯
65
82 mΩ
5
10
⎯
S
⎯ 2080 ⎯
⎯
280
⎯
pF
⎯ 1060 ⎯
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
tr
VGS 10 V
0V
ID = 12.5 A
⎯
20
⎯
VOUT
ton
⎯
40
⎯
ns
tf
⎯
10
⎯
VDD ∼− 100 V
toff
Duty <= 1%, tw = 10 μs
⎯
40
⎯
Qg
VDD ∼− 160 V, VGS = 10 V,
Qgs
ID = 25 A
Qgd
⎯
44
⎯
⎯
21
⎯
nC
⎯
23
⎯
Note 5: Connect the S1 pin and S2 pin together, and ground them except during switching time measurement.
Source-Drain Diode Ratings and Characteristics (Note 6) (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Continuous drain reverse current
(Note 1, Note 6)
Pulse drain reverse current
(Note 1, Note 6)
Continuous drain reverse current
(Note 1, Note 6)
Pulse drain reverse current
(Note 1, Note 6)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR1
IDRP1
IDR2
IDRP2
VDS2F
trr
Qrr
⎯
⎯
⎯
⎯
IDR1 = 25 A, VGS = 0 V
IDR = 25 A, VGS = 0 V,
dIDR/dt = 100 A/μs
⎯
⎯
25
A
⎯
⎯
100
A
⎯
⎯
1
A
⎯
⎯
4
A
⎯
⎯
−1.5
V
⎯
290
⎯
ns
⎯
2.2
⎯
μC
Note 6: IDR1, IDRP1: Current flowing between the drain and the S2 pin. Ensure that the S1 pin is left open.
IDR2, IDRP2: Current flowing between the drain and the S1 pin. Ensure that the S2 pin is left open.
Unless otherwise specified, connect the S1 and S2 pins together, and ground them.
2
2009-09-29
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