2SK2795 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SK2795

Silicon N Channel MOS FET UHF Power Amplifier

Hitachi -> Renesas Electronics 

2SK2795

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

VDSS

Gate to source voltage

VGSS

Drain current

ID

Drain peak current

ID(pulse)*1

Channel dissipation

Pch*2

Channel temperature

Tch

Storage temperature

Tstg

Note: 1. PW ≤ 10ms, duty cycle ≤ 50 %

2. Value at Tc = 25°C

Ratings

10

±6

0.17

0.3

1

150

–45 to +150

Unit

V

V

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Zero gate voltege drain

IDSS

—

current

Gate to source leak current IGSS

—

Gate to source cutoff voltage VGS(off) 0.3

Input capacitance

Ciss

—

Output capacitance

Coss

—

Output Power

Pout

24

Drain Rational

ηD

40

Note: 3. Marking is “ DX “.

Typ

—

Max

10

Unit

µA

Test Conditions

VDS = 10 V, VGS = 0

—

±5.0

µA

VGS = ±6V, VDS = 0

—

1.0

V

ID = 1mA, VDS = 5V

9.5

—

pF

VGS = 2V, VDS = 0

f = 1MHz

4.5

—

pF

VDS = 5, VGS = o

f = 1MHz

—

—

dBm VDS = 4.7V

f =836.5MHz

Pin = 13dBm

—

—

%

VDS = 4.7V

f =836.5MHz

Pin = 13dBm

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