2SJ599 Просмотр технического описания (PDF) - NEC => Renesas Technology

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Компоненты Описание

производитель

2SJ599

SWITCHING P-CHANNEL POWER MOS FET

NEC => Renesas Technology 

SINGLE AVALANCHE ENERGY vs.

INDUCTIVE LOAD

100

IAS = –20 A

10

EAS = 40 mJ

1

VDD = –30 V

RG = 25 Ω

0.1 VGS = –20 → 0 V

10 µ

100 µ

1m

L - Inductive Load - H

10 m

2SJ599

SINGLE AVALANCHE ENERGY

DERATING FACTOR

160

VDD = –30 V

140

RG = 25 Ω

VGS = –20 → 0 V

120

IAS ≤ –20 A

100

80

60

40

20

0

25 50 75 100 125 150

Starting Tch - Starting Channel Temperature - ˚C

6

Data Sheet D14644EJ3V0DS

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