2SD2275 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SD2275

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD2275

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min)

·High DC Current Gain-

: hFE= 5000( Min.) @(IC= 4A, VCE= 5V)

·Low Collector Saturation Voltage-

: VCE(sat)= 2.5V(Max)@ (IC= 4A, IB=B 4mA)

·Complement to Type 2SB1502

APPLICATIONS

·Designed for power amplification.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

Collector Power Dissipation

@Ta=25℃

PC

Collector Power Dissipation

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

8

A

3.5

W

60

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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