2SD2536(2003) Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание

производитель

2SD2536
(Rev.:2003)

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)

Toshiba 

2SD2536

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

Base resistance

DC current gain

Collector-emitter saturation voltage

Input threshold voltage

Collector output capacitance

Unclamped inductive load energy

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

RB

hFE

VCE (sat) (1)

VCE (sat) (2)

VBL

Cob

ES/B

VCB = 80 V, IE = 0

VEB = 6 V, IC = 0

IC = 10 mA, IB = 0

―

VCE = 2 V, IC = 1 A

IC = 0.7 A, VBH = 4.2 V

IC = 1 A, VBH = 4.2 V

VCE = 50 V, IC = 100 µA

VCB = 10 V, IE = 0, f = 1 MHz

L = 10 mH, IC = 1 A, VBH = 10 V

Min Typ. Max Unit

―

―

10

µA

0.3

―

1.5 mA

85

100 115

V

2.5

3.6

4.7

kΩ

2000 ―

―

―

―

1.2

V

―

―

1.5

―

―

0.7

V

―

20

―

pF

5

―

―

mJ

Turn-on time

Switching time

Storage time

Fall time

tr

20 µs

Input

tstg

0

VBH = 5 V

tf

Duty cycle ≤ 1%

Output

―

0.3

―

VCC = 30 V

―

4.0

―

µs

―

0.6

―

Marking

D2536

Product No.

Lot No.

Explanation of Lot No.

Month of manufacture (January to December are denoted by letters A to L respectively.)

Year of manufacture (Last decimal digit of the year of manufacture)

2

2003-02-04

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