2SD2536(2003) Просмотр технического описания (PDF) - Toshiba

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производитель

2SD2536
(Rev.:2003)

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)

Toshiba 

2SD2536

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)

2SD2536

Switching Applications

Micro Motor Drive, Hammer Drive Applications

Unit: mm

• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

• Low saturation voltage: VCE (sat) = 1.2 V (max)

(IC = 0.7 A, VBH = 4.2 V)

• Zener diode included between collector and base.

Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Bias voltage

Collector current

Collector power dissipation

Base current

Junction temperature

Storage temperature range

Symbol

Rating

Unit

VCBO

VCEO

VEBO

VB

IC

PC

IB

Tj

Tstg

85

V

100 ± 15

V

6

V

20

V

2

A

0.9

W

0.5

A

150

°C

−55 to 150

°C

Equivalent Circuit

BASE

RB

3.6 kΩ

COLLECTOR

≈ 5 kΩ ≈ 300 Ω

EMITTER

JEDEC

TO-92MOD

JEITA

―

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)

1

2003-02-04

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