2SD2480 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SD2480 Datasheet PDF : 5 Pages
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IC – VCE
4
3 mA 2 mA 1 mA 700 μA
3
500 μA
400 μA
300 μA
2
IB = 200 μA
1
0
0
1
Common emitter
Ta = 25°C
2
3
4
5
Collector-emitter voltage VCE (V)
3
Common emitter
IC/IB = 1000
VCE (sat) – IC
Ta = −55°C
1
25
100
0.5
0.3
0.5
1
3
5
Collector current IC (A)
2SD2480
hFE – IC
10 k
3k
25
Ta = 100°C
1k
−55
300
100
30
10
0.01
Common emitter
VCE = 2 V
0.03
0.1
0.3
1
3
10
Collector current IC (A)
10
5
3
1
0.5
0.1
VBE (sat) – IC
Common emitter
IC/IB = 1000
Ta = −55°C
25
100
0.3 0.5
1
3
5
Collector current IC (A)
IC – VBE
3
Common emitter
VCE = 2 V
2
Ta = 100°C
1
−55
25
0
0
0.8
1.6
2.4
3.2
4.0
Base-emitter voltage VBE (V)
PC – Ta
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50 75 100 125 150 175
Ambient temperature Ta (°C)
3
2006-11-21
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