2SD2480 Просмотр технического описания (PDF) - Toshiba

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производитель

2SD2480

TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power Transistor)

Toshiba 

2SD2480

Electrical Characteristics (Ta = 25°C)

Characteristics

Collector cut-off current

Emitter cut-off current

Collector- emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE

VCE (sat)

VBE (sat)

fT

Cob

VCB = 80 V, IE = 0

VEB = 8 V, IC = 0

IC = 10 mA, IB = 0

VCE = 2 V, IC = 1 A (pulse)

IC = 1 A, IB = 1 mA (pulse)

IC = 1 A, IB = 1 mA (pulse)

VCE = 2 V, IC = 0.5 A

VCB = 10 V, IE = 0, f = 1 MHz

Min Typ. Max Unit

―

―

―

―

100 ―

2000 ―

―

―

―

―

― 100

―

20

10

μA

4

mA

―

V

―

1.5

V

2.0

V

― MHz

―

pF

Turn-on time

Switching time Storage time

Fall time

ton

20 μs

Input IB1

Output

―

0.4

―

tstg

IB2

VCC = 30 V

tf

IB1 = −IB2 = 1 mA, duty cycle ≤ 1%

―

4.0

―

μs

―

0.6

―

Marking

D2480

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-21

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