2SD2082 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SD2082

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD2082

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=8A;IB=16m A

VBEsat Base-emitter saturation voltage

IC=8A;IB=16m A

V(BR)CEO Collector-emitter breakdown voltage IC=10mA;IB=0

IEBO

Emitter cut-off current

VEB=6V; IC=0

ICBO

Collector cut-off current

VCB=120V; IE=0

hFE

DC current gain

IC=8 A ; VCE=4V

fT

Transition frequency

IC=1 A ; VCE=12V

COB

Output capacitance

IE=0 ; VCB=10V;f=1MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=8A ;IB1=-IB2=16mA

VCC=40V ,RL=5Ω

MIN TYP. MAX UNIT

1.5

V

2.5

V

120

V

10

mA

10

μA

2000

20

MHz

210

pF

0.6

μs

7.0

μs

1.5

μs

2

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