2SD1979 Просмотр технического описания (PDF) - Panasonic Corporation
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2SD1979 Datasheet PDF : 3 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1979
Silicon NPN epitaxial planar type
For low frequency amplification
For muting
For DC-DC converter
0.3+–00..01
3
Unit: mm
0.15+–00..0150
■ Features
• Low ON resistance Ron
• High forward current transfer ratio hFE
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
/ packing.
1
2
(0.65) (0.65)
1.3±0.1
2.0±0.2
e pe) ■ Absolute Maximum Ratings Ta = 25°C
c e. d ty Parameter
Symbol Rating
Unit
n d stag tinue Collector-base voltage (Emitter open) VCBO
50
V
a e cle con Collector-emitter voltage (Base open) VCEO
20
V
lifecy , dis Emitter-base voltage (Collector open) VEBO
25
V
n u duct typed Collector current
IC
300
mA
te tin Pro ed Peak collector current
ICP
500
mA
four ntinu Collector power dissipation
PC
150
mW
ing isco Junction temperature
Tj
150
°C
in n follow ed d Storage temperature
Tstg −55 to +150 °C
10°
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking symbol: 3W
a o ludes e, plan ■ Electrical Characteristics Ta = 25°C ± 3°C
inc typ Parameter
Symbol
Conditions
Min Typ Max Unit
c tinued ance Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20
V
M is con inten Base-emitter voltage
VBE VCE = 2 V, IC = 4 mA
0.6
V
/Dis , ma Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
1
µA
D ance type Emitter-base cutoff current (Collector open) IEBO VEB = 25 V, IC = 0
ten ce Forward current transfer ratio *1
hFE VCE = 2 V, IC = 4 mA
1
µA
500
2 500
Main tenan Collector-emitter saturation voltage
VCE(sat) IC = 30 mA, IB = 3 mA
0.1
V
ain Transition frequency
fT
VCB = 6 V, IE = −4 mA, f = 200 MHz
80
MHz
d m Collector output capacitance
lane (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
4.5
pF
(p ON resistance *2
Ron
1
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
Rank
S
hFE
500 to 1 500
T
800 to 2 500
*2: Ron Measuremet circuit
1 kΩ
IB = 5 mA
f = 1 kHz
V = 0.3 V
VB VV VA
Ron =
VB
VA − VB
× 1 000 (Ω)
Publication date: March 2007
SJC00233CED
1
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