2SD1413 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SD1413 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1413
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0
VCEsat Collector-emitter saturation voltage IC=2A ;IB=4mA
VBEsat Base-emitter saturation voltage
IC=2A ;IB=4mA
ICBO
Collector cut-off current
VCB=60V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=3A ; VCE=2V
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IB1=-IB2=6mA
VCC=30V ,RL=10>
MIN TYP. MAX UNIT
40
V
1.5
V
2.0
V
20
µA
2.5
mA
2000
1000
0.1
µs
1.0
µs
0.2
µs
2
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