2SD1115 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

2SD1115

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SD1115(K)

Silicon NPN Triple Diffused

Application

High voltage switching, igniter

Outline

TO-220AB

1

23

1. Base

2. Collector

(Flange)

3. Emitter

2

1

4.5 kΩ

(Typ)

250 Ω

(Typ)

3

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

IC(peak)

PC*1

Tj

Tstg

Ratings

400

300

7

3

6

40

150

–55 to +150

Unit

V

V

V

A

A

W

°C

°C

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